详情描述
电学特性
FEOL Electrical Characterization
In IC device manufacturing electrical characteristics of layers and films must be well controlled. Conventional contact test methods on wafers, like the 4-point probe FSM offers, do no longer meet modern requirements. State of the art IC feature extremely thin, often only a few atomic layers of material. FSM's contactless RsL probe for sheet resistance and leakage as well as the non-destructive EOT probe for IC-CV measurements meet the challenge to characterize ultra shallow junctions and thin dielectric materials on production wafers.
FSM offers contact and non-contact electrical characterization metrology used in FEOL device
3DIC TSV and BWS TTV硅片表面形貌测量
Film Stress薄膜应力量测仪
FEOL Electrical Characterization 电学特性
Thin wafer metrology 晶圆测量学
Film Adhesion漆膜附着力测试
FSM offers contact and non-contact electrical characterization metrology used in FEOL device